Oxygen-based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide
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1995Author
Huang, Jen-Wu
Kuech, Thomas F.
Anderson, Timothy J.
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Citation
The following article appeared in Huang, J.W., Kuech, T.F., & Anderson, T.J. (1995). Oxygen Based Deep Levels In Metalorganic Vapor Phase Epitaxy Indium Gallium Arsenide. Applied Physics Letters, 67(8), 1116-18. and may be found at http://link.aip.org/link/?apl/67/1116