ELECTRONIC TRANSPORT IN GAN NANOWIRES
Abstract
Gallium nitride nanowires (GaNNws) have attracted more and more attention among researchers
due to their excellent performance to be the candidate of next generation semiconductor
devices. Their characteristics are wide bandgap, high mobility, and high thermal stability. They
have been employed in several emerging nanoscale devices, such as the light emitting diodes [1],
high-speed field-effect transistors [2], lasers [3], and nanogenerators basing on the piezoelectric
property [4]. GaN can crystallize in wurtzite and zinc-blende polytypes, but wurtzite is the more
thermodynamically stable one and thus the only polytype considered in this work.