A statistical analysis of copper bottom coverage of high-aspect-ratio features using ionized physical vapor deposition
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Date
2002Author
Snodgrass, Thomas G.
Shohet, J. Leon
Publisher
Institute of Electrical and Electronics Engineers Inc
Metadata
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http://digital.library.wisc.edu/1793/10368Description
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Citation
Snodgrass, T.G., & Shohet, J.L. (2002). A Statistical Analysis Of Copper Bottom Coverage Of High Aspect Ratio Features Using Ionized Physical Vapor Deposition. Ieee Transactions On Semiconductor Manufacturing, 15(1), 30-38.